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> Adopts high-quality 3D NAND wafer level chip
> Supports PCIe3.0 x4, and NVMe 1.3 protocol
> All-metal cooling plate is included; equipped with intelligent temperature control technology
> Supports TRIM to improve read/write performance and speed
> Supports Max. Write technology for full-disk SLC cache
> Supports LDPC ECC
> Low power consumption management
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Advance partial payment required on orders above Rs. 5000 (delivery charges may apply)
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Technical Specification |
|
Product Model | DHI-SSD-E900N128G |
Capacity1 | 512 GB |
Form Factor | M.2 2280 |
Port | PCIe Gen 3.0 x 4 |
Net Weight | Max 8 g (0.02 lb) |
Product Dimensions2 | 80.00 mm × 22.00 mm × 2.25 mm (3.15″ × 0.87″ × 0.09″) |
Packaging Dimensions | 130 mm × 104 mm × 17 mm (5.12″ × 4.09″ × 0.67″) |
Memory Component | 3D NAND |
Power Consumption2 | 3521 mW (max) |
1188 mW (idle) | |
S.M.A.R.T | Support |
TRIM | Support |
Garbage Collection | Support |
Sequential Read2 | Up to 2000 MB/s |
Sequential Write2 | Up to 1500 MB/s |
MTBF | 1,500,000 hours |
Operating Temperature | 0°C to +70°C (+32°F to +158°F) |
Storage Temperature | –40°C to +85°C (–40°F to +185°F) |
Operating Humidity | 5%–95% (non-condensing) |
Vibration Resistance | 10-200Hz, 0.5 G |
Shock Resistance | 1500G&0.5 ms (half sine wave) |
TBW | 256 TB |
Warranty3 | 3-year limited warranty |
Reference | 1. Capacity calculation: 1 GB = 1 billion bytes (IDEMA). Actual available capacity might be reduced (due to formatting, partition, operating system applications, or other necessary usage). |
Information | 2. System configuration of performance test: Chip-AMD Ryzen 5 5600X 6-Core [email protected] GHz, 8G-DDR4, operating system-Windows 10 x64, testing tool-CrystalDiskMark 6.0.0 x64. |
3. Warranty period or maximum write amount (TBW), whichever comes first. | |
4. High-performance SLC cache has been enabled. | |
*The above data is based on internal testing of Zhejiang Huayixin Technology Co., Ltd Laboratory The actual performance might differ depending on the device it is being used with. |
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